USIO offers single-crystal sapphire ingots grown with the Kyropoulos technique. With this technique, our sapphire ingots are with high quality (LED grade) and low defect density.
We supply a comprehensive choice of single-crystal ingots including 2-inch, 4-inch, 6-inch ,and 8-inch.
At USIO, we are constantly expanding our range of sapphire products to meet market demand.
Material Characteristics
Chemical
Composition
|
Al2O3 |
Crystal
System
|
Hexagonal System
a = b = 4.77 Å ,c = 13.04 Å |
| Physical properties |
Melting
point |
2050℃ |
Coefficient
of expansion |
6.7×10-6/℃ parallel to C-axis
5.0×10-6/℃ perpendicular to C-axis |
Specific
Heat |
0.187 cal/(g·℃) (20 ℃) |
Heat
capacity |
18.63 cal(mole·℃) (20 ℃)
29.86 cal(mole·℃) (1000 ℃) |
Thermal
conductivity |
46.06 W/m·℃ ( 0℃) |
| Density |
3.98 g /cm3 |
| Hardness |
Mohs 9 |
Tensile
strength |
400 MPa at 25℃
275 MPa at 500℃
355 MPa at 1000℃ |
Flexural
Strength |
450MPa to 895MPa |
Compressive
strength |
2.0 GPa |
|
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